MGY25N120D中文資料安森美半導體數(shù)據(jù)手冊PDF規(guī)格書

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

N–Channel Enhancement–Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies.

Co–packaged IGBT’s save space, reduce assembly time and cost.

? Industry Standard High Power TO–264 Package (TO–3PBL)

? High Speed Eoff: 216 μJ/A typical at 125°C

? High Short Circuit Capability – 10 μs minimum

? Soft Recovery Free Wheeling Diode is included in the package

? Robust High Voltage Termination

? Robust RBSOA