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K4S56163PF-RG

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERALDESCRIPTION TheK4S56163PFis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactions

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S56163PF-RG/F1L

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERALDESCRIPTION TheK4S56163PFis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactions

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S56163PF-RG/F75

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERALDESCRIPTION TheK4S56163PFis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactions

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S56163PF-RG/F90

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERALDESCRIPTION TheK4S56163PFis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactions

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S56163PF-RGSLASHF1L

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERALDESCRIPTION TheK4S56163PFis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactions

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S56163PF-RGSLASHF75

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERALDESCRIPTION TheK4S56163PFis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactions

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S56163PF-RGSLASHF90

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERALDESCRIPTION TheK4S56163PFis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactions

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S56163LC

16Mx16MobileSDRAM54CSP

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S56163LC-RF

16Mx16MobileSDRAM54CSP

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S56163LF

4Mx16Bitx4BanksMobileSDRAMin54BOC

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    K4S56163PF-RG

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SAMSUNG
16+
BGA
4000
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
 詢價(jià)
24+
BGA
2000
詢價(jià)
SEC
2016+
FBGA
9000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
SEC
2016+
FBGA
6523
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
 詢價(jià)
SAMSUNG
24+
BGA
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
SAMSANG
19+
BGA
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
SAMSUNG
24+
BGA
2658
原裝正品!現(xiàn)貨供應(yīng)!
 詢價(jià)
SEC
23+
FBGA
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
SAMSUNG
22+23+
BGA
37100
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
BGA
24
詢價(jià)
更多K4S56163PF-RG供應(yīng)商 更新時(shí)間2025-2-27 15:14:00

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