首頁(yè)>IRFR224TRPBFA>規(guī)格書(shū)詳情
IRFR224TRPBFA中文資料KERSEMI數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

廠商型號(hào) |
IRFR224TRPBFA |
功能描述 | Power MOSFET |
文件大小 |
3.37389 Mbytes |
頁(yè)面數(shù)量 |
7 頁(yè) |
生產(chǎn)廠商 | Kersemi Electronic Co., Ltd. |
企業(yè)簡(jiǎn)稱 |
KERSEMI |
中文名稱 | Kersemi Electronic Co., Ltd.官網(wǎng) |
原廠標(biāo)識(shí) | ![]() |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-3-9 20:18:00 |
人工找貨 | IRFR224TRPBFA價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
IRFR224TRPBFA規(guī)格書(shū)詳情
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Surface Mount (IRFR224/SiHFR224)
? Straight Lead (IRFU224/SiHFU224)
? Available in Tape and Reel
? Fast Switching
? Ease of Paralleling
? Lead (Pb)-free Available
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-252 |
35890 |
詢價(jià) | |||
SAMSUNG |
24+ |
35200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | |||
IR |
24+ |
TO-252 |
36800 |
詢價(jià) | |||
IR |
22+ |
TO-252 |
16648 |
原裝正品現(xiàn)貨,可開(kāi)13點(diǎn)稅 |
詢價(jià) | ||
IR |
19+ |
D-pak |
74976 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價(jià) | ||
IR |
18+ |
DPAK |
85600 |
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票 |
詢價(jià) | ||
IR |
22+ |
TO-252 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
IR |
23+ |
TO-252 |
7000 |
詢價(jià) | |||
Vishay Siliconix |
2022+ |
TO-252-3,DPak(2 引線 + 接片 |
38550 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo) |
詢價(jià) | ||
IR |
23+ |
D-Pak |
7600 |
全新原裝現(xiàn)貨 |
詢價(jià) |