首頁 >IPD50R280CE>規(guī)格書列表
| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IPD50R280CE | 500V Superjunction MOSFET for Consumer and Lighting Applications 500VCoolMOS?CEPowerMOSFET TheCoolMOS?CEisanewtechnologyplatformofInfineon’smarketleadinghighvoltagepowerMOSFETsdesignedaccordingtotherevolutionarysuperjunction(SJ)principle. 500VCEportfolioprovidesallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeas | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IPD50R280CE | 500V CoolMOS??CE Power MOSFET 500VCoolMOS?CEPowerMOSFET TheCoolMOS?CEisanewtechnologyplatformofInfineon’smarketleadinghighvoltagepowerMOSFETsdesignedaccordingtotherevolutionarysuperjunction(SJ)principle. 500VCEportfolioprovidesallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeas | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IPD50R280CE | N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
IPD50R280CE | 500V CoolMOS? CE Power Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
500V CoolMOS? CE Power Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
500VCoolMOS?CEPowerTransistor 500VCoolMOS?CEPowerMOSFET TheCoolMOS?CEisanewtechnologyplatformofInfineon’smarketleadinghighvoltagepowerMOSFETsdesignedaccordingtotherevolutionarysuperjunction(SJ)principle. 500VCEportfolioprovidesallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeas | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
500VCoolMOS??CEPowerMOSFET 500VCoolMOS?CEPowerMOSFET TheCoolMOS?CEisanewtechnologyplatformofInfineon’smarketleadinghighvoltagepowerMOSFETsdesignedaccordingtotherevolutionarysuperjunction(SJ)principle. 500VCEportfolioprovidesallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeas | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
500VSuperjunctionMOSFETforConsumerandLightingApplications 500VCoolMOS?CEPowerMOSFET TheCoolMOS?CEisanewtechnologyplatformofInfineon’smarketleadinghighvoltagepowerMOSFETsdesignedaccordingtotherevolutionarysuperjunction(SJ)principle. 500VCEportfolioprovidesallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeas | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
500VSuperjunctionMOSFETforConsumerandLightingApplications 500VCoolMOS?CEPowerMOSFET TheCoolMOS?CEisanewtechnologyplatformofInfineon’smarketleadinghighvoltagepowerMOSFETsdesignedaccordingtotherevolutionarysuperjunction(SJ)principle. 500VCEportfolioprovidesallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeas | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
500VCoolMOS?CEPowerTransistor 500VCoolMOS?CEPowerMOSFET TheCoolMOS?CEisanewtechnologyplatformofInfineon’smarketleadinghighvoltagepowerMOSFETsdesignedaccordingtotherevolutionarysuperjunction(SJ)principle. 500VCEportfolioprovidesallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeas | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
500VCoolMOS??CEPowerMOSFET 500VCoolMOS?CEPowerMOSFET TheCoolMOS?CEisanewtechnologyplatformofInfineon’smarketleadinghighvoltagepowerMOSFETsdesignedaccordingtotherevolutionarysuperjunction(SJ)principle. 500VCEportfolioprovidesallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeas | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
500V0.28(ohm)N-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.28Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
500V0.28(ohm)N-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP |
詳細(xì)參數(shù)
- 型號(hào)：
IPD50R280CE
- 功能描述：
MOSFET 500V 280 RDS CoolMOS Superjunction MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
19+ |
TO-252 |
30000 |
原裝現(xiàn)貨,假一賠拾 |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
標(biāo)準(zhǔn)封裝 |
12048 |
原廠渠道供應(yīng),大量現(xiàn)貨,原型號(hào)開票。 |
詢價(jià) | ||
INFINEON |
18+ |
TO252 |
9800 |
一級(jí)代理/全新原裝現(xiàn)貨/長(zhǎng)期供應(yīng)! |
詢價(jià) | ||
INFINEON/英飛凌 |
2021+ |
TO-252 |
18056 |
原裝進(jìn)口假一罰十 |
詢價(jià) | ||
INFINEON/英飛凌 |
2019+ |
TO252 |
3470 |
原廠渠道 可含稅出貨 |
詢價(jià) | ||
INFINEON |
21+ |
TO-252 |
15000 |
全新原裝公司現(xiàn)貨
|
詢價(jià) | ||
INFINEON/英飛凌 |
21+ |
TO-252 |
6000 |
原裝正品 |
詢價(jià) | ||
INFINEON |
21+ |
TO-252 |
10000 |
十年信譽(yù),只做原裝,有掛就有現(xiàn)貨! |
詢價(jià) | ||
INFINEON/英飛凌 |
24+ |
TO-252 |
5015 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
INFINEON |
22+ |
TO252 |
20000 |
只做原裝,公司現(xiàn)貨,提供一站式BOM配單服務(wù)! |
詢價(jià) |
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