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零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

BSO612CVG

SIPMOSSmall-Signal-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSP612P

Enhancementmode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BTS612

TWOCHANNELPROFET

Discription PROFETRanIntellgent Powerswitchwithintegrated protectlonagainstself-destruction

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

CFB612

PNPSILICONPLASTICPOWERDARLINGTONTRANSISTOR

CDIL

Continental Device India Limited

CM612

G-31/2Miniature2PinBase

WHEREINNOVATIONCOMESTOLIGHT

CML

Chicago Miniature Lamp,inc

CM612

Base

VCC

Visual Communications Company

CMX612

TheProductDataAmendmentseriesofdocuments

CMLMICRO

CML Microcircuits

CTSPWF-612-D

PowerTransformers-StandardEDual115V

CT

Central Technologies

CTSPWF-612-S

PowerTransformers-StandardESingle115V

CT

Central Technologies

CWST612

DATASUBJECTTOCHANGEWITHOUTNOTLCE

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

D612K

25V/35V,2ALow-FrequencyPowerAmpApplications?

25V/35V,2ALow-FrequencyPowerAmplifierApplications Features ·HighcollectordissipationandwideASO.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

DC-612

3.0WATTSINGLE&DUALOUTPUTDC-DCCONVERTERS

INTRONICS

Intronics Power, Inc.

DC-612-I

3.0WATTHIGHISOLATIONDC-DCCONVERTERS

INTRONICS

Intronics Power, Inc.

DG612

High-Speed,Low-GlitchD/CMOSAnalogSwitches

DESCRIPTION TheDG611,DG612,DG613featurehigh-speedlowcapacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES ?Fastswitching-tON:12ns ?Lowchargeinjection:±2pC ?Widebandwidth:500MHz ?5

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG612

High-Speed,Low-GlitchD/CMOSAnalogSwitches

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG612

High-Speed,Low-GlitchD/CMOSAnalogSwitches

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG612

High-Speed,Low-GlitchD/CMOSAnalogSwitches

FEATURES ?Fastswitching-tON:12ns ?Lowchargeinjection:±2pC ?Widebandwidth:500MHz ?5VCMOSlogiccompatible ?LowRDS(on):18? ?Lowquiescentpower:1.2nW ?Singlesupplyoperation BENEFITS ?Improveddatathroughput ?Minimalswitchingtransients ?Improvedsystem

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG612A

1pCChargeInjection,100pALeakage,QuadSPSTSwitches

DESCRIPTION TheDG611/612/613featurehigh-speedlow-capacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES ●FastSwitching—tON:12ns ●LowChargeInjection:2pC ●WideBandwidth:500MHz ●5-VCMOSL

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG612A

1pCChargeInjection,100pALeakage,QuadSPSTSwitches

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG612A

1pCChargeInjection,100pALeakage,QuadSPSTSwitches

FEATURES ?Halogen-freeaccordingtoIEC61249-2-21 Definition ?Lowchargeinjection(1pCtyp.) ?Leakagecurrent

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    BSO612CV G

  • 功能描述:

    MOSFET Dual N/P Channel 60 V 3 A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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Infineon
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INFINEON
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12000
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INFINEO
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Infineon
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更多BSO612CV G供應(yīng)商 更新時(shí)間2024-12-29 15:01:00