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AD8351ARM

LowDistortionDifferentialRF/IFAmplifier

GENERALDESCRIPTION TheAD8351isalowcostdifferentialamplifierusefulinRFandIFapplicationsupto2.2GHz.Thevoltagegaincanbesetfromunityto26dBusingasingleexternalgainresistor.TheAD8351providesanominal150Ωdifferentialoutputimpedance.Theexcellentdistortionpe

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD8351ARM

LowDistortionDifferentialRF/IFAmplifier

GENERALDESCRIPTION TheAD8351isalowcostdifferentialamplifierusefulinRFandIFapplicationsupto2.2GHz.Thevoltagegaincanbesetfromunityto26dBusingasingleexternalgainresistor.TheAD8351providesanominal150Ωdifferentialoutputimpedance.Theexcellentdistortionpe

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD8351ARM

LowDistortionDifferentialRF/IFAmplifier

FEATURES?3dBbandwidthof2.2GHzforAV=12dBSingleresistorprogrammablegain:0dB≤AV≤26dBDifferentialinterfaceLownoiseinputstage2.7nV/√HzatAV=10dBLowharmonicdistortion ?79dBcsecondat70MHz ?81dBcthirdat70MHzOIP3of31dBmat70MHzSingle-supplyoperation:

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD8351ARMZ

LowDistortionDifferentialRF/IFAmplifier

FEATURES?3dBbandwidthof2.2GHzforAV=12dBSingleresistorprogrammablegain:0dB≤AV≤26dBDifferentialinterfaceLownoiseinputstage2.7nV/√HzatAV=10dBLowharmonicdistortion ?79dBcsecondat70MHz ?81dBcthirdat70MHzOIP3of31dBmat70MHzSingle-supplyoperation:

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD8351ARMZ

LowDistortionDifferentialRF/IFAmplifier

GENERALDESCRIPTION TheAD8351isalowcostdifferentialamplifierusefulinRFandIFapplicationsupto2.2GHz.Thevoltagegaincanbesetfromunityto26dBusingasingleexternalgainresistor.TheAD8351providesanominal150Ωdifferentialoutputimpedance.Theexcellentdistortionpe

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD8351-EVAL

LowDistortionDifferentialRF/IFAmplifier

GENERALDESCRIPTION TheAD8351isalowcostdifferentialamplifierusefulinRFandIFapplicationsupto2.2GHz.Thevoltagegaincanbesetfromunityto26dBusingasingleexternalgainresistor.TheAD8351providesanominal150Ωdifferentialoutputimpedance.Theexcellentdistortionpe

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD8351-EVAL

LowDistortionDifferentialRF/IFAmplifier

GENERALDESCRIPTION TheAD8351isalowcostdifferentialamplifierusefulinRFandIFapplicationsupto2.2GHz.Thevoltagegaincanbesetfromunityto26dBusingasingleexternalgainresistor.TheAD8351providesanominal150Ωdifferentialoutputimpedance.Theexcellentdistortionpe

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD8351-EVALZ

LowDistortionDifferentialRF/IFAmplifier

FEATURES?3dBbandwidthof2.2GHzforAV=12dBSingleresistorprogrammablegain:0dB≤AV≤26dBDifferentialinterfaceLownoiseinputstage2.7nV/√HzatAV=10dBLowharmonicdistortion ?79dBcsecondat70MHz ?81dBcthirdat70MHzOIP3of31dBmat70MHzSingle-supplyoperation:

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

DRV8351DIMPWTSEP

DRV8351-SEP:40-VThree-PhaseBLDCGateDriver

1Features ?40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V ?TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4

TITexas Instruments

德州儀器美國(guó)德州儀器公司

DRV8351DMPWTSEP

DRV8351-SEP:40-VThree-PhaseBLDCGateDriver

1Features ?40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V ?TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4

TITexas Instruments

德州儀器美國(guó)德州儀器公司

詳細(xì)參數(shù)

  • 型號(hào)：

    AD8351ARC-EMX

  • 制造商：

    Analog Devices

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更多AD8351ARC-EMX供應(yīng)商 更新時(shí)間2025-1-31 10:36:00

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